View HBFP-0420-BLK_130642.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

High Performance Isolated Collector Silicon Bipolar Transistor Technical Data
HBFP-0420
Features
* Ideal for High Gain, Low Noise Applications * Transition Frequency fT = 25 GHz * Typical Performance at 1.8 GHz Associated Gain of 17 dB and Noise Figure of 1.1 dB at 2 V and 5 mA P1dB of 12 dBm at 2 V and 20 mA * Can be Used Without Impedance Matching
Description Surface Mount Plastic Package/ SOT-343 (SC-70) Hewlett Packard's HBFP-0420 is a
Outline 4T
high performance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. HBFP-0420 provides an associated gain of 17 dB, noise figure of 1.1 dB, and P1dB of 12 dBm at 1.8 GHz. Because of high gain and low current characteristics, HBFP-0420 is ideal for cellular/ PCS handsets as well as for C-Band and Ku-Band applications. This product is based on a 25 GHz transition frequency fabrication process, which enables the products to be used for high performance, low noise applications at 900 MHz, 1.9 GHz, 2.4 GHz, and beyond.
Pin Configuration
Applications
* LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and Down Converter for Cellular and PCS Handsets and Cordless Telephones * Oscillator for TV Delivery and TVRO Systems up to 10 GHz
Emitter Collector
Note: Package marking provides orientation and identification.
03
Base
Emitter
2
HBFP-0420 Absolute Maximum Ratings
Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2] Junction Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum[1] 1.5 15.0 4.5 36 162 150 -65 to 150 Thermal Resistance: jc = 300C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. PT limited by maximum ratings.
Electrical Specifications, TC = 25C
Symbol Parameters and Test Conditions IC = 1 mA, open base VCB = 5 V, IE = 0 VEB = 1.5 V, IC = 0 VCE = 2 V, IC = 5 mA IC = 5 mA, VCE = 2 V, f = 1.8 GHz IC = 5 mA, VCE = 2 V, f = 1.8 GHz IC = 20 mA, VCE = 2 V, f = 1.8 GHz Units V nA A -- dB dB dB 15.5 50 80 1.1 17 17 12 Min. 4.5 150 15 150 1.4 Typ. Max. DC Characteristics BVCEO Collector-Emitter Breakdown Voltage I CBO I EBO hFE Collector-Cutoff Current Emitter-Base Cutoff Current DC Current Gain
RF Characteristics FMIN Minimum Noise Figure Ga |S 21 |2 P-1dB Associated Gain Insertion Power Gain Power Output @ 1 dB Compression Point
IC = 20 mA, VCE = 2 V, f = 1.8 GHz dBm
3
HBFP-0420 Typical Scattering Parameters,
VCE = 2 V, IC = 5 mA, TC = 25C
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang
0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
0.746 0.682 0.607 0.585 0.532 0.512 0.502 0.490 0.483 0.480 0.479 0.482 0.487 0.497 0.513 0.532 0.553 0.575 0.592 0.609 0.623 0.635 0.648
-11.9 -55.6 -90.1 -97.5 -128.3 -143.1 -151.6 -169.8 -174.6 161.4 149.2 137.6 126.5 115.4 105.0 94.6 84.0 74.5 66.0 58.2 50.7 43.0 34.5
23.4 21.9 19.9 19.3 16.8 15.5 14.7 12.9 11.6 10.3 9.3 8.4 7.6 6.9 6.2 5.6 5.0 4.4 3.9 3.3 2.9 2.4 1.9
14.853 12.473 9.909 9.181 6.918 5.952 5.453 4.422 3.786 3.286 2.908 2.629 2.389 2.205 2.040 1.902 1.778 1.662 1.559 1.469 1.393 1.312 1.248
171.0 139.8 116.8 112.2 93.1 83.4 78.4 65.8 55.2 45.2 35.7 26.5 17.4 8.3 -0.8 -9.8 -18.7 -27.5 -36.1 -44.4 -52.6 -60.8 -69.1
-41.4 -28.5 -25.0 -24.5 -22.9 -22.3 -21.9 -21.2 -20.5 -19.8 -19.2 -18.5 -17.9 -17.3 -16.8 -16.3 -15.8 -15.3 -14.9 -14.6 -14.2 -13.9 -13.6
0.009 0.038 0.056 0.059 0.072 0.077 0.080 0.088 0.095 0.102 0.110 0.118 0.127 0.136 0.145 0.153 0.162 0.171 0.179 0.186 0.195 0.202 0.209
84.8 63.6 49.3 46.9 37.2 33.2 31.2 26.9 23.4 19.8 16.3 12.5 8.1 3.5 -1.5 -7.1 -12.6 -18.2 -24.0 -29.8 -35.4 -41.6 -48.0
0.985 0.861 0.696 0.661 0.516 0.450 0.419 0.359 0.314 0.286 0.266 0.248 0.233 0.209 0.189 0.161 0.134 0.115 0.110 0.113 0.120 0.127 0.130
-6.6 -29.4 -46.6 -49.3 -62.2 -67.7 -71.6 -78.4 -86.3 -92.5 -98.1 -104.1 -110.5 -117.9 -126.4 -137.1 -152.0 -171.2 167.1 147.2 130.6 118.0 103.9
HBFP-0420 Noise Parameters: VCE = 2 V, IC = 5 mA
Freq. GHz 0.9 1.0 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Fmin dB 1.00 1.02 1.10 1.14 1.18 1.25 1.32 1.39 1.49 1.58 1.63 1.75 1.88 1.94 2.05 2.15 2.23 2.47 2.59 2.63 2.74 Mag 0.281 0.266 0.187 0.175 0.154 0.184 0.226 0.254 0.292 0.312 0.355 0.375 0.416 0.453 0.486 0.506 0.532 0.556 0.589 0.610 0.624 opt Ang 28.8 36.6 68.3 94.1 118.4 146.5 165.9 -176.8 -162.3 -147.3 -135.5 -121.0 -108.5 -98.1 -84.4 -74.8 -65.0 -56.8 -48.4 -40.4 -31.0 RN/50 Ga dB 22.19 21.39 18.30 16.92 16.21 14.34 13.00 11.79 10.79 9.95 9.22 8.55 7.99 7.47 6.99 6.49 6.04 5.65 5.32 4.91 4.56
9.6 9.2 7.6 6.8 6.1 5.4 5.0 4.9 5.0 6.0 6.8 9.3 12.3 15.8 21.4 26.8 33.6 41.7 50.4 58.2 68.3
S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point.
4
HBFP-0420 Typical Scattering Parameters,
VCE = 2 V, IC = 15 mA, TC = 25C
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang
0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
0.481 0.437 0.416 0.414 0.415 0.418 0.421 0.428 0.435 0.439 0.442 0.447 0.455 0.467 0.484 0.504 0.527 0.552 0.572 0.590 0.604 0.616 0.630
-22.1 -91.4 -131.0 -138.0 -163.4 -174.6 178.9 165.4 153.6 143.2 133.3 123.7 114.1 104.6 95.5 86.0 76.7 68.0 60.4 53.3 46.4 39.2 31.4
29.1 26.0 22.6 21.9 18.7 17.2 16.3 14.4 12.9 11.6 10.5 9.6 8.8 8.0 7.3 6.7 6.1 5.5 4.9 4.4 3.9 3.4 3.0
28.438 19.969 13.526 12.378 8.619 7.254 6.549 5.262 4.418 3.811 3.362 3.024 2.749 2.522 2.327 2.163 2.014 1.880 1.765 1.658 1.565 1.484 1.406
166.1 124.7 101.9 97.8 81.9 74.2 69.7 59.3 49.9 41.0 32.4 23.9 15.4 6.8 -1.8 -10.4 -18.9 -27.4 -35.5 -43.6 -51.6 -59.6 -67.7
-43.0 -31.2 -28.2 -27.7 -25.5 -24.4 -23.7 -22.3 -21.0 -19.9 -18.9 -18.1 -17.3 -16.6 -16.0 -15.4 -14.9 -14.5 -14.1 -13.8 -13.4 -13.1 -12.9
0.007 0.027 0.039 0.041 0.053 0.060 0.065 0.077 0.089 0.101 0.113 0.125 0.137 0.148 0.159 0.169 0.179 0.188 0.197 0.205 0.213 0.221 0.228
82.3 60.7 53.4 52.9 49.6 47.9 46.6 42.9 38.8 34.1 29.0 23.7 17.9 11.8 5.4 -1.0 -7.6 -14.3 -20.6 -27.1 -33.6 -40.3 -47.2
0.959 0.702 0.500 0.465 0.341 0.292 0.269 0.226 0.196 0.177 0.163 0.152 0.138 0.120 0.100 0.077 0.059 0.060 0.077 0.096 0.112 0.123 0.134
-10.5 -41.4 -57.2 -59.6 -69.8 -74.4 -77.6 -84.1 -91.1 -96.8 -102.1 -107.2 -113.4 -121.1 -131.4 -148.2 -178.2 144.1 116.6 100.7 89.0 77.9 66.5
HBFP-0420 Noise Parameters: VCE = 2 V, IC = 15 mA
Freq. GHz 0.9 1.0 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Fmin dB 1.57 1.58 1.63 1.67 1.74 1.72 1.76 1.84 1.89 1.97 2.03 2.15 2.28 2.36 2.42 2.54 2.65 2.83 2.96 3.10 3.14 Mag 0.033 0.054 0.169 0.252 0.234 0.306 0.343 0.365 0.383 0.407 0.431 0.463 0.483 0.513 0.538 0.560 0.581 0.602 0.621 0.640 0.653 opt Ang -135.5 -151.8 -155.2 -148.1 -158.3 -149.2 -142.2 -133.5 -124.4 -115.6 -106.3 -96.8 -87.3 -77.3 -67.8 -59.2 -51.4 -44.6 -37.2 -29.9 -21.8 RN/50 Ga dB 23.88 23.04 19.79 18.34 17.52 15.71 14.24 12.97 11.89 11.01 10.22 9.53 8.89 8.32 7.79 7.30 6.85 6.42 5.99 5.61 5.23
8.0 7.8 6.7 6.3 6.4 6.1 6.5 7.7 9.4 11.5 14.1 17.8 22.9 28.7 35.5 43.0 51.7 61.3 71.0 81.1 90.5
S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point.
5
HBFP-0420 Typical Performance
25 2 mA 5 mA 10 mA 15 mA 4 30 25 20 15 10 5 0
ASSOCIATED GAIN (dB)
20
ASSOCIATED GAIN (dB)
15
NOISE FIGURE (dB)
3
2
10
1
5 0 0 2 4 6 8 10 FREQUENCY (GHz) 0 0 2 4 6 FREQUENCY (GHz)
2 mA 5 mA 10 mA 15 mA 8 10
0.9 GHz 1.8 GHz 2.5 GHz 3 GHz 4 GHz 5 GHz 6 GHz
0
5
10
15
20
25
COLLECTOR CURRENT (mA)
Figure 1. Associated Gain vs. Frequency and Collector Current at 2 V.
3.00 2.50
Figure 2. Noise Figure vs. Frequency and Collector Current at 2 V.
25 0.9 GHz 2.5 GHz 15 3 GHz 4 GHz 10 5 GHz 6 GHz 5 0
Figure 3. Associated Gain vs. Collector Current and Frequency at 2 V.
2.5
ASSOCIATED GAIN (dB)
NOISE FIGURE (dB)
2.00 1.50 1.00 0.50 0 0 5 10 15 0.9 GHz 1.8 GHz 2.5 GHz 3 GHz 4 GHz 5 GHz 6 GHz 20 25 COLLECTOR CURRENT (mA)
NOISE FIGURE (dB)
20
1.8 GHz
2.0
1.5
1.0
0.5 0 0 1 2 3 4 5 6 0 1 2 3 4 5 VOLTAGE (V) VOLTAGE (V)
0.9 GHz 1.8 GHz 2.5 GHz 3 GHz 4 GHz 5 GHz 6 GHz 6
Figure 4. Noise Figure vs. Collector Current and Frequency at 2 V.
Figure 5. Associated Gain vs. Voltage (VCE) at 5 mA.
Figure 6. Noise Figure vs. Voltage (VCE) at 5 mA.
6
HBFP-0420 Die Model and PSPICE Parameters
C XX CMP10 DIODEMODELFORM # DIODE MODEL #
MODEL = DBC
CMP9 R CMP5 C C = 19E-3 pF CMP2 DIODE AREA= REGION= MODEL = DBC TEMP= CMP1 NPNBJTSUBST
R =12 OH
IS=I.40507E-17 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= AREA= REGION= MODEL=DCS TEMP= CMP12 DIODEMODELFORM
RS= CJO=2.393E-14 TT= EG= VJ=0.729 M=0.44 N=1 FC=0.8
ISR= NR= IKF= NBV= IBVL= NBVL= FFE=
CMP3 DIODE
CMP7 R B
XX
R=7.78 OH C =7E-3 pF CMP6 C CMP16 DIODE TEMP= MODEL=DBE REGION= AREA=
AREA=3 REGION= MODEL=BJTMODEL
# DIODE MODEL #
MODEL = DCS
CMP8 R
R=.194 OH CMP69 R
IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF=
RS=2.17347E2 CJO=8.974E-14 TT= EG= VJ=0.6 M=0.42 N= FC=0.8
ISR= NR= IKF= NBV= IBVL= NBVL= FFE=
CMP11 DIODEMODELFORM CMP68 BITMODELFORM # BJT MODEL # NPN=yes PNP=
MODEL = BJTMODEL
XX R-1 OH E IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF=
# DIODE MODEL #
MODEL = DCE
Forward Reverse BF=1E6 BR=1 IKE=1.4737E-1 IKR=1.1E-2 ISE=7.094E-20 ISC= NE=1.006 NC=2 VAF=4.4E1 VAR=3.37 NF=1 NR=1.005 TF=5.3706E-12 TR=4E-9 XTF=20 VTF=0.8 ITF=2.21805486E-1 PTF=22 XTB=0.7 APPROXOB=yes
Diode and junction EG=1.17 CJC=2.7056E-14 IS=4.4746E-18 VJC=.6775 MJC=0.3319 IMAX= XTI=3 XCJC=4.39790997E-1 TNOM=21 FC=0.8
Parasitics Noise RB=9.30144818 KF= IRB=3.029562E-6 AF= RBM=.1 KB= RE= AB= RC= FB=
RS= CJO=2.593E-14 TT= EG= VJ=0.8971 M=2.292E-1 N=1.0029 FC=0.8
ISR= NR= IKF= NBV= IBVL= NBVL= FFE=
Substrate IS5= NS=
CJE=7.474248E-14 VJE=0.9907 MJE=0.5063 CJS= VJS= MJS=
This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to the measured data in this data sheet. Note: The value of beta was high (BF = 1E6) to compensate for the fact that diode DBE reduces the current going into the base (current flows through DBE). The diodes are necessary to model the non-linear effects.
7
SOT343 Package Model
C = 0.05 pF
CCBC C LLB L LT1 L LLI L
BASE
COLLECTOR
CMP44 L
LT3 L
LL3 L
L = 0.22 nH C = 0.08 pF
L = 0.2 nH
C2T1 C C = 0.05 pF C1T1 C CCEB C
L = 0.7 nH
EMITTER
LL2 L
L = 0.7 nH
C1T3 C
L = 0.5 nH C = 0.1 pF
C2T3 C
L = 0.2 nH C = 0.144 pF
L = 0.2 nH
C = 0.01 pF
CCEC C
AGROUND
AGROUND
C = 0.04 pF
AGROUND
AGROUND
C = 0.1 pF AGROUND
C1T2 C
L = 0.1 nH
LT2 L
C = 0.04 pF AGROUND
C2T2 C
L = 0.15 nH
LLE L
AGROUND
8
Part Number Ordering Information
Part Number HBFP-0420-TR1 HBFP-0420-TR2 HBFP-0420-BLK Devices per Reel 3000 10,000 100 Container 7" Reel 13" Reel antistatic bag
Package Dimensions
SOT-343 (SC-70 4 Lead)
1.30 (0.051) BSC 1.30 (.051) REF
2.60 (.102) E E1 1.30 (.051)
0.55 (.021) TYP 1.15 (.045) BSC e D h 1.15 (.045) REF
0.85 (.033)
A
b TYP
A1 L DIMENSIONS
C TYP
SYMBOL A A1 b C D E e h E1 L
MAX. MIN. 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0 (0) 0.35 (0.014) 0.25 (0.010) 0.20 (0.008) 0.10 (0.004) 2.10 (0.083) 1.90 (0.075) 2.20 (0.087) 2.00 (0.079) 0.65 (0.025) 0.55 (0.022) 0.450 TYP (0.018) 1.35 (0.053) 1.15 (0.045) 0.35 (0.014) 0.10 (0.004) 10 0
DIMENSIONS ARE IN MILLIMETERS (INCHES)
9
Device Orientation
REEL TOP VIEW 4 mm END VIEW
CARRIER TAPE USER FEED DIRECTION COVER TAPE
8 mm
03
03
03
03
Tape Dimensions
For Outline 4T
P P0 D P2
E
F W
D1 t1 (CARRIER TAPE THICKNESS)
8 MAX.
K0
5 MAX.
A0
B0
DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION)
SYMBOL A0 B0 K0 P D1 D P0 E W t1 F P2
SIZE (mm) 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 1.55 0.05 4.00 0.10 1.75 0.10 8.00 0.30 0.255 0.013 3.50 0.05 2.00 0.05
SIZE (INCHES) 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 0.061 0.002 0.157 0.004 0.069 0.004 0.315 0.012 0.010 0.0005 0.138 0.002 0.079 0.002
PERFORATION
CARRIER TAPE DISTANCE
www.hp.com/go/rf For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/Canada: 1-800-235-0312 or 408-654-8675 Far East/Australasia: Call your local HP sales office. Japan: (81 3) 3335-8152 Europe: Call your local HP sales office. Data subject to change. Copyright (c) 1998 Hewlett-Packard Co. Printed in U.S.A. 5968-0129E (6/98)

▲Up To Search▲

Price & Availability of HBFP-0420-BLK

	To Download HBFP-0420-BLK Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .